Datasheets

SI4599DY-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

5.8 A, 6.8 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

SO-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

3 W, 3.1 W

Qg - Gate Charge :

11.7 nC, 25 nC

Rds On - Drain-Source Resistance :

35.5 mOhms, 45 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage :

40 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

1.2 V, 1.4 V