Product overview
- Part Number
- SI2323DS-T1-GE3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
Documents & Media
- Datasheets
- SI2323DS-T1-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4.7 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.25 W
- Qg - Gate Charge :
- 12.5 nC
- Rds On - Drain-Source Resistance :
- 39 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Description
MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
AP836 3R9 J 100PPM
TA810PW8R20JE
TA810PW3R00JE
TA810PW6R80JE
TA810PW4R70JE
TA810PW5R00JE
AP836 R1 J
AP821 2K7 J 100PPM
AP821 5K6 J 100PPM
AP821 25R J 100PPM
AP821 6K8 J 100PPM
AP821 2K5 J 100PPM
AP821 50R J 100PPM
AP851 10K F 50PPM
AP836 330R F 50PPM
AP836 1K2 F 50PPM
AP836 8K2 F 50PPM
AP836 2K2 F 50PPM
AP836 120R F 50PPM
AP836 5K F 50PPM