Datasheets

SIS413DN-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

18 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

PowerPAK-1212-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

52 W

Qg - Gate Charge :

73 nC

Rds On - Drain-Source Resistance :

9.4 mOhms

Technology :

SI

Tradename :

TrenchFET, PowerPAK

Transistor Polarity :

P-Channel

Vds - Drain-Source Breakdown Voltage :

30 V

Vgs - Gate-Source Voltage :

- 10 V, + 10 V

Vgs th - Gate-Source Threshold Voltage :

1 V