Product overview

Part Number
2SK3798(STA4,Q,M)
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET PWR MOS PD=40W F=1MHZ

Documents & Media

Datasheets
2SK3798(STA4,Q,M)

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
4 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
SC-67-3
Packaging :
Tube
Pd - Power Dissipation :
40 W
Qg - Gate Charge :
26 nC
Rds On - Drain-Source Resistance :
3.5 Ohms
Technology :
SI
Tradename :
MOSIV
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
900 V
Vgs - Gate-Source Voltage :
- 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage :
2 V

Description

MOSFET PWR MOS PD=40W F=1MHZ

Price & Procurement

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