Product overview

Part Number
TK10A60E,S4X
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS

Documents & Media

Datasheets
TK10A60E,S4X

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
10 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-220-3
Pd - Power Dissipation :
45 W
Qg - Gate Charge :
40 nC
Rds On - Drain-Source Resistance :
750 mOhms
Technology :
SI
Tradename :
DTMOSIV
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V

Description

MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS

Price & Procurement

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