Product overview

Part Number
TPH8R80ANH,L1Q
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC

Documents & Media

Datasheets
TPH8R80ANH,L1Q

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
59 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOP-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
61 W
Qg - Gate Charge :
33 nC
Rds On - Drain-Source Resistance :
7.4 mOhms
Technology :
SI
Tradename :
U-MOSVIII-H
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Description

MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC

Price & Procurement

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