Datasheets

UF3C120080K3S

Channel Mode :

Enhancement

Id - Continuous Drain Current :

33 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Packaging :

Tube

Pd - Power Dissipation :

254.2 W

Qg - Gate Charge :

51 nC

Rds On - Drain-Source Resistance :

100 mOhms

Technology :

SiC

Tradename :

SiC FET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1.2 kV

Vgs - Gate-Source Voltage :

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage :

6 V