Datasheets

IRF6665TRPBF

Channel Mode :

Enhancement

Id - Continuous Drain Current :

4.2 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

DirectFET-SH

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

42 W

Qg - Gate Charge :

8.7 nC

Rds On - Drain-Source Resistance :

53 mOhms

Technology :

SI

Tradename :

DirectFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

4 V