Product overview

Part Number
SI6562CDQ-T1-GE3
Manufacturer
Vishay Semiconductors
Product Category
MOSFET
Description
MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR

Documents & Media

Datasheets
SI6562CDQ-T1-GE3

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
6.7 A, 6.1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
2 Channel
Package / Case :
TSSOP-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1.6 W, 1.7 W
Qg - Gate Charge :
15 nC, 34 nC
Rds On - Drain-Source Resistance :
22 mOhms, 30 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage :
600 mV

Description

MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR

Price & Procurement

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