Product overview
- Part Number
- IPT60R125G7XTMA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET HIGH POWER NEW
Documents & Media
- Datasheets
- IPT60R125G7XTMA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 20 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- HSOF-8
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 120 W
- Qg - Gate Charge :
- 27 nC
- Rds On - Drain-Source Resistance :
- 108 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET HIGH POWER NEW
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
LNK2H562MSEHBB
LNK2H562MSEHBN
LNK2H562MSEJBB
LNK2H562MSEJBN
LNK2H562MSEH
LNK2H562MSEJ
E36D451LPN562TEM9N
E36D351LPN332TDB7N
E36F401CDN822MEE3U
E32D350HPB473MC67U
E36L501CPN222MDB7U
E37L351CPN562MDE3M
E37L351CPN562MDE3U
E36D351LPN651TCA5U
E37X401CGN602KEE34
E36D201LPN822TDB7N
ERWE451LGC122MC96N
E37X501CHN822MEM9U
E37L401CPN562MEB7U
E37L401CPN562MEB7M