Product overview
- Part Number
- STD6N65M2
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Description
- MOSFET PTD HIGH VOLTAGE
Documents & Media
- Datasheets
- STD6N65M2
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 60 W
- Qg - Gate Charge :
- 9.8 nC
- Rds On - Drain-Source Resistance :
- 1.35 Ohms
- Technology :
- SI
- Tradename :
- MDmesh
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET PTD HIGH VOLTAGE
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
EmETXe-i77M2-3517UE
EmETXe-i67M1-2610UE
MB09-3020-2100-C1
Q928-V5C0-BBB0-I1
EmETXe-i87M0-WT-4402E
QA76-B320-0000-C0-V
MB09-6010-2000-C1
EmETXe-i87M0-4700EQ
EmETXe-i87M2-5700EQ
EmETXe-i89U0-6600U
EmETXe-i87U2-4650U
EmETXe-i89M0-6822EQ
MB09-6020-2100-C1
EmETXe-i88U0-5650U
MB09-5010-2100-C1
QB03-8100-2210-C2
MC08-4000-1200-C0
MB09-G060-2100-C1
MB09-7030-4100-C1
MB09-D060-2100-C1