Product overview
- Part Number
- SIHG21N80AE-GE3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET N-CHANNEL 800V
Documents & Media
- Datasheets
- SIHG21N80AE-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 17.4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 32 W
- Qg - Gate Charge :
- 48 nC
- Rds On - Drain-Source Resistance :
- 235 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 800 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Description
MOSFET N-CHANNEL 800V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
Q3-0.005-00-121
HF300P-0.001-00-56
SP1200-0.012-00-86
SP400-0.009-00-22
SP400-0.007-00-22
SP1200-0.016-AC-5
Q3-0.005-AC-57
HF650P-0.001-01-18
PPK4-0.006-00-31
HF650P-0.002-01-9
SP1200-0.012-AC-113
SP400-0.009-00-13
SP800-0.005-00-12
HF650P-0.001-01-3
HF650P-0.002-01-32
BP100-0.008-00-134
SP980-0.009-AC-99
HF650P-0.001-01-113
HF650P-0.002-01-75
SP400-0.007-00-12