Product overview
- Part Number
- SIHD1K4N60E-GE3
- Manufacturer
- Vishay / Siliconix
- Product Category
- MOSFET
- Description
- MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Documents & Media
- Datasheets
- SIHD1K4N60E-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Pd - Power Dissipation :
- 63 W
- Qg - Gate Charge :
- 7.5 nC
- Rds On - Drain-Source Resistance :
- 1.45 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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