Product overview

Part Number
IMZ120R220M1HXKSA1
Manufacturer
Infineon Technologies
Product Category
MOSFET
Description
MOSFET SIC DISCRETE

Documents & Media

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
13 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-4
Packaging :
Tube
Pd - Power Dissipation :
75 W
Qg - Gate Charge :
8.5 nC
Rds On - Drain-Source Resistance :
220 mOhms
Technology :
SiC
Tradename :
CoolSiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage :
5.7 V

Description

MOSFET SIC DISCRETE

Price & Procurement

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