Product overview
- Part Number
- IGT60R190D1SATMA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET GAN HV
Documents & Media
- Datasheets
- IGT60R190D1SATMA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 12.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- HSOF-8
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 55.5 W
- Qg - Gate Charge :
- 3.2 nC
- Rds On - Drain-Source Resistance :
- 190 mOhms
- Technology :
- GaN
- Tradename :
- CoolGaN
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage :
- 900 mV
Description
MOSFET GAN HV
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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