Product overview

Part Number
TW070J120B,S1Q
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET SIC-MOSFET TO-3PN V=1200

Documents & Media

Datasheets
TW070J120B,S1Q

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
36 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-3P
Packaging :
Tube
Pd - Power Dissipation :
272 W
Qg - Gate Charge :
67 nC
Rds On - Drain-Source Resistance :
70 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
5.8 V

Description

MOSFET SIC-MOSFET TO-3PN V=1200

Price & Procurement

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