Product overview
- Part Number
- IMZA65R030M1HXKSA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET SILICON CARBIDE MOSFET
Documents & Media
- Datasheets
- IMZA65R030M1HXKSA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 53 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 197 W
- Qg - Gate Charge :
- 48 nC
- Rds On - Drain-Source Resistance :
- 42 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 5 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage :
- 5.7 V
Description
MOSFET SILICON CARBIDE MOSFET
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
PT01A-18-32P(SR)
MS27467T25F4P
MS3470W14-15PW
2M80100726NF94SA
MS3470L22-41PX-LC
MS3470L22-41PW-LC
AFD54-18-32SY-6117
CA3106E16S-1S-F80
KPSE06B10-6P
AFD54-18-30PX-6117
MS3471W18-11P
KPT07A16-8P
MS3108E14S-1P
D38999/24FF35SE
MS3476L16-8SW
MS3472W14-4PW
PT02E-12-8SX
D38999/24WJ4SE
MS27468T25B19S
MS3470W14-19PY