Product overview

Part Number
2SK879-Y(TE85L,F)
Manufacturer
Toshiba
Product Category
JFET
Description
JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

Documents & Media

Datasheets
2SK879-Y(TE85L,F)

Product Attributes

Configuration :
Single
Drain-Source Current at Vgs=0 :
1.2 mA
Gate-Source Cutoff Voltage :
- 5 V
Id - Continuous Drain Current :
6.5 mA
Mounting Style :
SMD/SMT
Package / Case :
SC-70-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
100 mW
Series :
2SK879
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
10 V
Vgs - Gate-Source Breakdown Voltage :
- 30 V

Description

JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

Price & Procurement

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