Product overview

Part Number
IXGA20N120B3-TRL
Manufacturer
IXYS
Product Category
IGBT Transistors
Description
IGBT Transistors IXGA20N120B3 TRL

Documents & Media

Datasheets
IXGA20N120B3-TRL

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.7 V
Configuration :
Single
Continuous Collector Current at 25 C :
36 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
TO-263-3
Packaging :
Reel
Pd - Power Dissipation :
180 W
Technology :
SI

Description

IGBT Transistors IXGA20N120B3 TRL

Price & Procurement

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