Product overview
- Part Number
- STGW60H65DFB-4
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors PTD IGBT & IPM
Documents & Media
- Datasheets
- STGW60H65DFB-4
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 80 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 283 W
- Series :
- STGW60H65DFB-4
- Technology :
- SI
Description
IGBT Transistors PTD IGBT & IPM
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
S-1711B1528I6T1U
S-1711C3018-I6T1U
S-1711C1827I6T1U
S-1711A2333I6T1U
S-1711D2518I6T1U
S-1711C2833-I6T1U
S-1711C2425-I6T1U
S-1711D2528-I6T1U
S-1711A3030I6T1U
S-1711C2830-I6T1U
S-1711C2815-I6T1U
S-1711A2525-I6T1U
S-1711B1528-I6T1U
S-1711B1825-I6T1U
S-1711A152J-I6T1U
S-1711A3025I6T1U
S-1711A3015-I6T1U
S-1711B1518-I6T1U
S-1711C2929I6T1U
S-1711A5030-I6T1U