Product overview

Part Number
IXYQ40N65B3D1
Manufacturer
IXYS
Product Category
IGBT Transistors
Description
IGBT Transistors IGBT XPT-GENX3

Documents & Media

Datasheets
IXYQ40N65B3D1

Product Attributes

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.7 V
Configuration :
Single
Continuous Collector Current at 25 C :
86 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-3P-3
Pd - Power Dissipation :
300 W
Technology :
SI

Description

IGBT Transistors IGBT XPT-GENX3

Price & Procurement

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