Product overview
- Part Number
- RJP65T43DPM-00#T1
- Manufacturer
- Renesas Electronics
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors POWER TRS1
Documents & Media
- Datasheets
- RJP65T43DPM-00#T1
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.8 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 40 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-3PFM
- Packaging :
- Tube
- Pd - Power Dissipation :
- 68.8 W
- Technology :
- SI
Description
IGBT Transistors POWER TRS1
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
1206B392K102CT
0805B154J500CT
CC0603FRNPO9BN122
1808N4R7C102CT
SH31N470J102CT
1210B153K102CT
1808N180J302CT
500R07S1R4AV4T
201R07S2R0AV4T
0805B124J250CT
CC1206JKNPOZBN152
1210N101J102CT
CS1206KKX7RCBB682
0402N0R6C101CT
CC0805KFX7R7BB225
0603J0500180JCT
0603J1000221JCT
0603J0500471JCT
AC1206JRNPOYBN102
1206N100G202CT