Product overview

Part Number
APT35GP120B2D2G
Manufacturer
Microsemi / Microchip
Product Category
IGBT Transistors
Description
IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX

Documents & Media

Datasheets
APT35GP120B2D2G

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Configuration :
Single
Continuous Collector Current at 25 C :
96 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Bulk
Pd - Power Dissipation :
543 W

Description

IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX

Price & Procurement

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