Product overview

Part Number
HGTG5N120BND
Manufacturer
onsemi / Fairchild
Product Category
IGBT Transistors
Description
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch

Documents & Media

Datasheets
HGTG5N120BND

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.45 V
Configuration :
Single
Continuous Collector Current at 25 C :
21 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
167 W
Series :
HGTG5N120BND
Technology :
SI

Description

IGBT Transistors 21a 1200V IGBT NPT Series N-Ch

Price & Procurement

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