Product overview
- Part Number
- HGTG10N120BND
- Manufacturer
- onsemi / Fairchild
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors 35A 1200V N-Ch
Documents & Media
- Datasheets
- HGTG10N120BND
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.45 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 17 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 298 W
- Series :
- HGTG10N120BND
- Technology :
- SI
Description
IGBT Transistors 35A 1200V N-Ch
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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