Product overview

Part Number
RGW50TS65DGC11
Manufacturer
ROHM Semiconductor
Product Category
IGBT Transistors
Description
IGBT Transistors FIELD STOP TRENCH IGBT

Documents & Media

Datasheets
RGW50TS65DGC11

Product Attributes

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.9 V
Configuration :
Single
Continuous Collector Current at 25 C :
50 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247N-3
Packaging :
Tube
Pd - Power Dissipation :
156 W
Technology :
SI

Description

IGBT Transistors FIELD STOP TRENCH IGBT

Price & Procurement

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