Product overview

Part Number
IKW50N60H3
Manufacturer
Infineon Technologies
Product Category
IGBT Transistors
Description
IGBT Transistors HIGH SPEED SWITCHING

Documents & Media

Datasheets
IKW50N60H3

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
2.25 V
Configuration :
Single
Continuous Collector Current at 25 C :
100 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
333 W
Series :
Trenchstop IGBT3
Technology :
SI

Description

IGBT Transistors HIGH SPEED SWITCHING

Price & Procurement

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