Product overview

Part Number
RGS30TSX2DHRC11
Manufacturer
ROHM Semiconductor
Product Category
IGBT Transistors
Description
IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Built-In FRD, Automotive Field Stop Trench IGBT

Documents & Media

Datasheets
RGS30TSX2DHRC11

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.7 V
Configuration :
Single
Continuous Collector Current at 25 C :
30 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
267 W

Description

IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Built-In FRD, Automotive Field Stop Trench IGBT

Price & Procurement

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