Product overview

Part Number
STGW60H65FB
Manufacturer
STMicroelectronics
Product Category
IGBT Transistors
Description
IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT

Documents & Media

Datasheets
STGW60H65FB

Product Attributes

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.6 V
Configuration :
Single
Continuous Collector Current at 25 C :
80 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
375 W
Series :
STGW60H65FB
Technology :
SI

Description

IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT

Price & Procurement

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