Product overview
- Part Number
- RGS80TSX2DGC11
- Manufacturer
- ROHM Semiconductor
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Built-In FRD, Field Stop Trench IGBT
Documents & Media
- Datasheets
- RGS80TSX2DGC11
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 80 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247N-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 555 W
Description
IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Built-In FRD, Field Stop Trench IGBT
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RN732BTTD1741B10
RG2012N-4021-W-T5
RN73R2BTTD1372B10
RN732BTTD7870B10
RN73R2ATTD4701B10
RN732ATTD7960B10
RN732ATTD4271B10
RG2012N-9760-W-T5
RN732BTTD1650B10
RN732BTTD3480B10
RN732BTTD5901B10
RN732BTTD1432B10
RN732ATTD7412B10
RN732BTTD2083B10
RN732BTTD1290B10
RN732BTTD6260B10
RN73R2ATTD6800B10
RN732BTTD6202B10
RN732ATTD1270B10
RN732ATTD1180B10
