Product overview

Part Number
IKD10N60RATMA1
Manufacturer
Infineon Technologies
Product Category
IGBT Transistors
Description
IGBT Transistors IGBT w/ INTG DIODE 600V 20A

Documents & Media

Datasheets
IKD10N60RATMA1

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.65 V
Configuration :
Single
Continuous Collector Current at 25 C :
20 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
150 W
Series :
Trenchstop RC
Technology :
SI

Description

IGBT Transistors IGBT w/ INTG DIODE 600V 20A

Price & Procurement

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