Product overview

Part Number
NGTB50N120FL2WG
Manufacturer
onsemi
Product Category
IGBT Transistors
Description
IGBT Transistors 1200V/50A FAST IGBT FSII

Documents & Media

Datasheets
NGTB50N120FL2WG

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.2 V
Configuration :
Single
Continuous Collector Current at 25 C :
100 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247
Packaging :
Tube
Pd - Power Dissipation :
535 W
Series :
NGTB50N120FL2
Technology :
SI

Description

IGBT Transistors 1200V/50A FAST IGBT FSII

Price & Procurement

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