Product overview
- Part Number
- STGW60H65DRF
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Documents & Media
- Datasheets
- STGW60H65DRF
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.9 V
- Continuous Collector Current at 25 C :
- 120 A
- Maximum Gate Emitter Voltage :
- 20 V
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-247
- Packaging :
- Tube
- Pd - Power Dissipation :
- 360 W
- Series :
- STGW60H65DRF
- Technology :
- SI
Description
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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