Product overview

Part Number
NGTG12N60TF1G
Manufacturer
onsemi
Product Category
IGBT Transistors
Description
IGBT Transistors 600V 12A IGBT TO-3PF

Documents & Media

Datasheets
NGTG12N60TF1G

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.6 V
Continuous Collector Current at 25 C :
24 A
Maximum Gate Emitter Voltage :
20 V
Mounting Style :
Through Hole
Package / Case :
TO-3PF-3L
Packaging :
Tube
Pd - Power Dissipation :
54 W
Series :
NGTG12N60TF1G
Technology :
SI

Description

IGBT Transistors 600V 12A IGBT TO-3PF

Price & Procurement

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