Product overview
- Part Number
- IRG7PH35UDPBF
- Manufacturer
- Infineon Technologies
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
Documents & Media
- Datasheets
- IRG7PH35UDPBF
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.9 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 50 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 180 W
- Series :
- Rectifier Diode Module
- Technology :
- SI
Description
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
C0805X152J1GEC7210
08051C224K4Z4A
C1210X201K1HACTU
C0805C561KBGACAUTO
GCQ1555C1H6R2CB01D
C0603C221KDTACTU
C0603C391K2RACTU
C0603X752K4JACAUTO
VJ0805Y273KXXAC
C0805X102J1GECTU
CAN08C822KARACTU
GCQ1555C1H9R8CB01D
C0603V152KBRAC7081
C1206X332G1HACTU
CBR06C159CAGAC
C0805X682J3RECTU
VJ0805V474MXJCW1BC
GCQ1555C1H6R8CB01D
C0402C331M8RACTU
C1210X822J1HACTU