Product overview

Part Number
STGW8M120DF3
Manufacturer
STMicroelectronics
Product Category
IGBT Transistors
Description
IGBT Transistors PTD IGBT & IPM

Documents & Media

Datasheets
STGW8M120DF3

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.85 V
Configuration :
Single
Continuous Collector Current at 25 C :
16 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
167 W
Series :
STGW8M120DF3
Technology :
SI

Description

IGBT Transistors PTD IGBT & IPM

Price & Procurement

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