Product overview
- Part Number
- IGB30N60H3
- Manufacturer
- Infineon Technologies
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors 600v Hi-Speed SW IGBT
Documents & Media
- Datasheets
- IGB30N60H3
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.95 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 60 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-263-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 187 W
- Series :
- HighSpeed 3
- Technology :
- SI
Description
IGBT Transistors 600v Hi-Speed SW IGBT
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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