Product overview
- Part Number
- STGWA60H65DFB
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors PTD IGBT & IPM
Documents & Media
- Datasheets
- STGWA60H65DFB
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 2 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 80 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 375 W
- Series :
- STGWA60H65DFB
- Technology :
- SI
Description
IGBT Transistors PTD IGBT & IPM
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
EH4600ETTTS-26.5M
EH4600ETTTS-28.5M
EH4600ETTTS-26.25M
FO5LSJDM200.0-BULK
FO7HSCAM80.0-BULK
EMS42HHA-27.000M
FO7HSCDE32.0-BULK
FO7HHADE10.0-BULK
FO7HSCDF40.0-BULK
FO7HHADE3.6864-BULK
FO7HSCDF18.432-BULK
FO3LSJBM200.0-BULK
EH2645TS-29.500M
ECXO-2158-32.000M
FO5HSCBE80.0-BULK
FO3LSCDF200.0-BULK
FO7LSJBE250.0-BULK
FO7LSCBE240.0-BULK
EMK13H2H-44.206M
FO5HSKBM153.6-BULK