Product overview
- Part Number
- RGT8NS65DGTL
- Manufacturer
- ROHM Semiconductor
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors 650V 4A IGBT Stop Trench
Documents & Media
- Datasheets
- RGT8NS65DGTL
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Continuous Collector Current at 25 C :
- 8 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-263-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 65 W
- Series :
- RGT8NS65D
- Technology :
- SI
Description
IGBT Transistors 650V 4A IGBT Stop Trench
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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