Product overview
- Part Number
- HGT1S10N120BNST
- Manufacturer
- onsemi / Fairchild
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors N-Channel IGBT NPT Series 1200V
Documents & Media
- Datasheets
- HGT1S10N120BNST
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 35 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-263AB-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 298 W
- Series :
- HGT1S10N120BNS
- Technology :
- SI
Description
IGBT Transistors N-Channel IGBT NPT Series 1200V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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