Product overview
- Part Number
- GT20N135SRA,S1E
- Manufacturer
- Toshiba
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors DISCRET IGBT TRANSTR Vces=1350V Ic=40A
Documents & Media
- Datasheets
- GT20N135SRA,S1E
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1350 V
- Collector-Emitter Saturation Voltage :
- 2.4 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 40 A
- Maximum Gate Emitter Voltage :
- 25 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 312 W
- Technology :
- SI
Description
IGBT Transistors DISCRET IGBT TRANSTR Vces=1350V Ic=40A
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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