Product overview

Part Number
IXYX50N170C
Manufacturer
IXYS
Product Category
IGBT Transistors
Description
IGBT Transistors IGBT DISCRETE

Documents & Media

Datasheets
IXYX50N170C

Product Attributes

Collector- Emitter Voltage VCEO Max :
1700 V
Collector-Emitter Saturation Voltage :
3.7 V
Continuous Collector Current at 25 C :
178 A
Maximum Gate Emitter Voltage :
5 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Pd - Power Dissipation :
1500 W

Description

IGBT Transistors IGBT DISCRETE

Price & Procurement

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