Product overview

Part Number
VS-GT400TH60N
Manufacturer
Vishay Semiconductors
Product Category
IGBT Modules
Description
IGBT Modules Output & SW Modules - DIAP IGBT

Documents & Media

Datasheets
VS-GT400TH60N

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.6 V
Configuration :
Half Bridge
Continuous Collector Current at 25 C :
530 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 175 C
Package / Case :
INT-A-PAK
Pd - Power Dissipation :
1.6 kW

Description

IGBT Modules Output & SW Modules - DIAP IGBT

Price & Procurement

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