Product overview

Part Number
IFF600B12ME4S8PB11BOSA1
Manufacturer
Infineon Technologies
Product Category
IGBT Modules
Description
IGBT Modules MEDIUM POWER ECONO

Documents & Media

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.75 V
Continuous Collector Current at 25 C :
600 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Packaging :
Tray
Pd - Power Dissipation :
20 mW
Product :
IGBT Silicon Modules

Description

IGBT Modules MEDIUM POWER ECONO

Price & Procurement

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