Product overview

Part Number
APTGT200H60G
Manufacturer
Microsemi / Microchip
Product Category
IGBT Modules
Description
IGBT Modules DOR CC6133

Documents & Media

Datasheets
APTGT200H60G

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.5 V
Configuration :
Full Bridge
Continuous Collector Current at 25 C :
290 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 100 C
Minimum Operating Temperature :
- 40 C
Package / Case :
SP6
Packaging :
Tube
Pd - Power Dissipation :
625 W
Product :
IGBT Silicon Modules

Description

IGBT Modules DOR CC6133

Price & Procurement

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