Product overview

Part Number
APTGTQ50TA65T3G
Manufacturer
Microsemi / Microchip
Product Category
IGBT Modules
Description
IGBT Modules CC3203

Documents & Media

Datasheets
APTGTQ50TA65T3G

Product Attributes

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.65 V
Configuration :
Hex
Continuous Collector Current at 25 C :
50 A
Gate-Emitter Leakage Current :
120 nA
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 40 C
Package / Case :
SP3F
Packaging :
Tube
Pd - Power Dissipation :
125 W
Product :
IGBT Silicon Modules

Description

IGBT Modules CC3203

Price & Procurement

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