APTGT200DA120G - Microsemi / Microchip

Product overview

Part Number: APTGT200DA120G

Manufacturer: Microsemi / Microchip

Product Category: IGBT Modules

Description: IGBT Modules DOR CC6109

Documents & Media

Datasheets: APTGT200DA120G

Product Attributes

Collector- Emitter Voltage VCEO Max :: 1.2 kV

Collector-Emitter Saturation Voltage :: 1.7 V

Configuration :: Single

Continuous Collector Current at 25 C :: 280 A

Gate-Emitter Leakage Current :: 500 nA

Maximum Operating Temperature :: + 100 C

Minimum Operating Temperature :: - 40 C

Package / Case :: SP6

Packaging :: Tube

Pd - Power Dissipation :: 890 W

Product :: IGBT Silicon Modules

Description

IGBT Modules DOR CC6109

Price & Procurement

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