Product overview

Part Number
APTGT100TDU60PG
Manufacturer
Microsemi / Microchip
Product Category
IGBT Modules
Description
IGBT Modules DOR CC6512

Documents & Media

Datasheets
APTGT100TDU60PG

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.5 V
Configuration :
Triple Dual Common Source
Continuous Collector Current at 25 C :
150 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 100 C
Minimum Operating Temperature :
- 40 C
Package / Case :
SP6-P
Packaging :
Tube
Pd - Power Dissipation :
340 W
Product :
IGBT Silicon Modules

Description

IGBT Modules DOR CC6512

Price & Procurement

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