F475R07W2H3B51BPSA1 - Infineon Technologies

Product overview

Part Number: F475R07W2H3B51BPSA1

Manufacturer: Infineon Technologies

Product Category: IGBT Modules

Description: IGBT Modules LOW POWER EASY

Documents & Media

Datasheets: F475R07W2H3B51BPSA1

Product Attributes

Collector- Emitter Voltage VCEO Max :: 650 V

Collector-Emitter Saturation Voltage :: 1.35 V

Continuous Collector Current at 25 C :: 75 A

Gate-Emitter Leakage Current :: 100 nA

Maximum Operating Temperature :: + 150 C

Minimum Operating Temperature :: - 40 C

Package / Case :: 56.7 mm x 48 mm

Packaging :: Tray

Pd - Power Dissipation :: 250 W

Product :: IGBT Silicon Modules

Description

IGBT Modules LOW POWER EASY

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