Product overview

Part Number
BSM50GAL120DN2
Manufacturer
Infineon Technologies
Product Category
IGBT Modules
Description
IGBT Modules 1200V 50A CHOPPER

Documents & Media

Datasheets
BSM50GAL120DN2

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.5 V
Configuration :
Half Bridge
Continuous Collector Current at 25 C :
78 A
Gate-Emitter Leakage Current :
400 nA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Package / Case :
Half Bridge GAL 1
Packaging :
Tray
Pd - Power Dissipation :
400 W
Product :
IGBT Silicon Modules

Description

IGBT Modules 1200V 50A CHOPPER

Price & Procurement

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